III-V nanowires for optoelectronic applications

Hoe Tan; Nian Jiang; Dhruv Saxena; Yu-Heng Lee; Sudha Mokkapati; Lan Fu; Qiang Gao; Hannah J Joyce; Chennupati Jagadish

doi:10.1149/05807.0093ecst

III-V nanowires for optoelectronic applications

Hoe Tan, Nian Jiang, Dhruv Saxena, Yu-Heng Lee, Sudha Mokkapati, Lan Fu, Qiang Gao, Hannah J Joyce, Chennupati Jagadish

Research output: Contribution to conference › Paper

Abstract

We present an overview of our work on improving the crystal quality and carrier lifetimes of our GaAs-based nanowires. These two properties are crucial for optoelectronic device applications and which we report by showing two examples of nanowire lasers and nanowire solar cells.

Original language	English
Pages	93-98
DOIs	https://doi.org/10.1149/05807.0093ecst
Publication status	Published - 2013
Event	International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting - Toronto Canada Duration: 1 Jan 2013 → …

Conference

Conference	International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting
Period	1/01/13 → …

Access to Document

10.1149/05807.0093ecst

Cite this

Tan, H., Jiang, N., Saxena, D., Lee, Y-H., Mokkapati, S., Fu, L., Gao, Q., Joyce, H. J., & Jagadish, C. (2013). III-V nanowires for optoelectronic applications. 93-98. Paper presented at International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting. https://doi.org/10.1149/05807.0093ecst

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author = "Hoe Tan and Nian Jiang and Dhruv Saxena and Yu-Heng Lee and Sudha Mokkapati and Lan Fu and Qiang Gao and Joyce, {Hannah J} and Chennupati Jagadish",

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Tan, H, Jiang, N, Saxena, D, Lee, Y-H, Mokkapati, S, Fu, L, Gao, Q, Joyce, HJ & Jagadish, C 2013, 'III-V nanowires for optoelectronic applications', Paper presented at International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting, 1/01/13 pp. 93-98. https://doi.org/10.1149/05807.0093ecst

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T1 - III-V nanowires for optoelectronic applications

AU - Tan, Hoe

AU - Jiang, Nian

AU - Saxena, Dhruv

AU - Lee, Yu-Heng

AU - Mokkapati, Sudha

AU - Fu, Lan

AU - Gao, Qiang

AU - Joyce, Hannah J

AU - Jagadish, Chennupati

PY - 2013

Y1 - 2013

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AB - We present an overview of our work on improving the crystal quality and carrier lifetimes of our GaAs-based nanowires. These two properties are crucial for optoelectronic device applications and which we report by showing two examples of nanowire lasers and nanowire solar cells.

U2 - 10.1149/05807.0093ecst

DO - 10.1149/05807.0093ecst

M3 - Paper

SP - 93

EP - 98

T2 - International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 3 - 223rd ECS Meeting

Y2 - 1 January 2013

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