Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation

Yu-Heng Lee; Zhe Li; Lan Fu; Patrick Parkinson; Kaushal Vora; Hoe Tan; Chennupati Jagadish

doi:10.1109/COMMAD.2012.6472395

Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation

Yu-Heng Lee, Zhe Li, Lan Fu, Patrick Parkinson, Kaushal Vora, Hoe Tan, Chennupati Jagadish

Research output: Contribution to conference › Paper

Abstract

Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (Î·) of 4.22%. This work suggests a promising route to optimize NWSCs.

Original language	English
Pages	131-132
DOIs	https://doi.org/10.1109/COMMAD.2012.6472395
Publication status	Published - 2012
Event	Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012) - Melbourne Australia Duration: 1 Jan 2012 → …

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012)
Period	1/01/12 → …

Access to Document

10.1109/COMMAD.2012.6472395

http://hdl.handle.net/1885/60293

Cite this

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title = "Improved GaAs Nanorwire solar Cells Using AIGaAs for Surface Passivation",

abstract = "Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency ({\^I}·) of 4.22%. This work suggests a promising route to optimize NWSCs.",

author = "Yu-Heng Lee and Zhe Li and Lan Fu and Patrick Parkinson and Kaushal Vora and Hoe Tan and Chennupati Jagadish",

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AU - Lee, Yu-Heng

AU - Li, Zhe

AU - Fu, Lan

AU - Parkinson, Patrick

AU - Vora, Kaushal

AU - Tan, Hoe

AU - Jagadish, Chennupati

PY - 2012

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AB - Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (Î·) of 4.22%. This work suggests a promising route to optimize NWSCs.

U2 - 10.1109/COMMAD.2012.6472395

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