Proton Implantation and Rapid Thermal Annealing Effects on GaAs/A1GaAs Quantum Well Infrared Photodetectors

Na Li; W Lu; Qiuxiang Liu; Shu Yuan; Zhi-Chang Li; H Dou; S Shen; Ning Li

doi:10.1006/spmi.1999.0785

Proton Implantation and Rapid Thermal Annealing Effects on GaAs/A1GaAs Quantum Well Infrared Photodetectors

Na Li, W Lu, Qiuxiang Liu, Shu Yuan, Zhi-Chang Li, H Dou, S Shen, Ning Li

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Abstract

We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing procedure (950 °C for 30 s). The photoluminescence (PL) and photoresponse spectra were measured as functions of ion dose in the range from 5×1014 to 2.5×1015 cm-3. The peak photoresponse wavelength was tunable between 8.2 and 9.8 ?m for the infrared radiation and the energy position of the PL peak from the MQW material changed from 1.62 to 1.645 eV. The effects of the ion implantation and thermal annealing on the device performance have been well characterized theoretically by the inter-diffusion of Al atoms across the GaAs/AlGaAs heterointerfaces and the relaxation energy of free carriers.

Original language	English
Pages (from-to)	317-324
Journal	Superlattices and Microstructures
Volume	26
Issue number	5
DOIs	https://doi.org/10.1006/spmi.1999.0785
Publication status	Published - 1999

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http://hdl.handle.net/1885/93699

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title = "Proton Implantation and Rapid Thermal Annealing Effects on GaAs/A1GaAs Quantum Well Infrared Photodetectors",

abstract = "We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing procedure (950 °C for 30 s). The photoluminescence (PL) and photoresponse spectra were measured as functions of ion dose in the range from 5×1014 to 2.5×1015 cm-3. The peak photoresponse wavelength was tunable between 8.2 and 9.8 ?m for the infrared radiation and the energy position of the PL peak from the MQW material changed from 1.62 to 1.645 eV. The effects of the ion implantation and thermal annealing on the device performance have been well characterized theoretically by the inter-diffusion of Al atoms across the GaAs/AlGaAs heterointerfaces and the relaxation energy of free carriers.",

author = "Na Li and W Lu and Qiuxiang Liu and Shu Yuan and Zhi-Chang Li and H Dou and S Shen and Ning Li",

year = "1999",

doi = "10.1006/spmi.1999.0785",

language = "English",

volume = "26",

pages = "317--324",

journal = "Superlattices and Microstructures",

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TY - JOUR

T1 - Proton Implantation and Rapid Thermal Annealing Effects on GaAs/A1GaAs Quantum Well Infrared Photodetectors

AU - Li, Na

AU - Lu, W

AU - Liu, Qiuxiang

AU - Yuan, Shu

AU - Li, Zhi-Chang

AU - Dou, H

AU - Shen, S

AU - Li, Ning

PY - 1999

Y1 - 1999

N2 - We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing procedure (950 °C for 30 s). The photoluminescence (PL) and photoresponse spectra were measured as functions of ion dose in the range from 5×1014 to 2.5×1015 cm-3. The peak photoresponse wavelength was tunable between 8.2 and 9.8 ?m for the infrared radiation and the energy position of the PL peak from the MQW material changed from 1.62 to 1.645 eV. The effects of the ion implantation and thermal annealing on the device performance have been well characterized theoretically by the inter-diffusion of Al atoms across the GaAs/AlGaAs heterointerfaces and the relaxation energy of free carriers.

AB - We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing procedure (950 °C for 30 s). The photoluminescence (PL) and photoresponse spectra were measured as functions of ion dose in the range from 5×1014 to 2.5×1015 cm-3. The peak photoresponse wavelength was tunable between 8.2 and 9.8 ?m for the infrared radiation and the energy position of the PL peak from the MQW material changed from 1.62 to 1.645 eV. The effects of the ion implantation and thermal annealing on the device performance have been well characterized theoretically by the inter-diffusion of Al atoms across the GaAs/AlGaAs heterointerfaces and the relaxation energy of free carriers.

U2 - 10.1006/spmi.1999.0785

DO - 10.1006/spmi.1999.0785

M3 - Article

VL - 26

SP - 317

EP - 324

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 5

ER -

Proton Implantation and Rapid Thermal Annealing Effects on GaAs/A1GaAs Quantum Well Infrared Photodetectors

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