Three-dimensional in situ photocurrent mapping for nanowire photovoltaics

Patrick Parkinson; Yu-Heng Lee; Lan Fu; Steffan Breuer; Hoe Tan; Chennupati Jagadish

doi:10.1021/nl304170q

Three-dimensional in situ photocurrent mapping for nanowire photovoltaics

Patrick Parkinson, Yu-Heng Lee, Lan Fu, Steffan Breuer, Hoe Tan, Chennupati Jagadish

Research output: Contribution to journal › Article

Abstract

Devices based upon semiconductor nanowires provide many well-known advantages for next-generation photovoltaics, however, limited experimental techniques exist to determine essential electrical parameters within these devices. We present a novel applicati

Original language	English
Pages (from-to)	1405-1409
Journal	Nano Letters
Volume	13
Issue number	4
DOIs	https://doi.org/10.1021/nl304170q
Publication status	Published - 2013

Access to Document

10.1021/nl304170q

http://hdl.handle.net/1885/72447

Cite this

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title = "Three-dimensional in situ photocurrent mapping for nanowire photovoltaics",

abstract = "Devices based upon semiconductor nanowires provide many well-known advantages for next-generation photovoltaics, however, limited experimental techniques exist to determine essential electrical parameters within these devices. We present a novel applicati",

author = "Patrick Parkinson and Yu-Heng Lee and Lan Fu and Steffan Breuer and Hoe Tan and Chennupati Jagadish",

year = "2013",

doi = "10.1021/nl304170q",

language = "English",

volume = "13",

pages = "1405--1409",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "4",

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T1 - Three-dimensional in situ photocurrent mapping for nanowire photovoltaics

AU - Parkinson, Patrick

AU - Lee, Yu-Heng

AU - Fu, Lan

AU - Breuer, Steffan

AU - Tan, Hoe

AU - Jagadish, Chennupati

PY - 2013

Y1 - 2013

N2 - Devices based upon semiconductor nanowires provide many well-known advantages for next-generation photovoltaics, however, limited experimental techniques exist to determine essential electrical parameters within these devices. We present a novel applicati

AB - Devices based upon semiconductor nanowires provide many well-known advantages for next-generation photovoltaics, however, limited experimental techniques exist to determine essential electrical parameters within these devices. We present a novel applicati

U2 - 10.1021/nl304170q

DO - 10.1021/nl304170q

M3 - Article

SN - 1530-6984

VL - 13

SP - 1405

EP - 1409

JO - Nano Letters

JF - Nano Letters

IS - 4

ER -